View CM10AD00-24H_161225.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MITSUBISHI IGBT MODULES
CM10AD00-24H
MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE
CM10AD00-24H
IC ..................................................................... 10A VCES ......................................................... 1200V Insulated Type CIB Module 3 Inverter + 3 Converter + Brake Thyristor + Thermistor + Current shunt resistor
APPLICATION AC & DC motor controls, General purpose inverters
OUTLINE DRAWING & CIRCUIT DIAGRAM
100 900.25
7.5 8 8 GT N P1 N1 P2 8 8 8 8 2.54 2.54 2.54 7.62 7.62
Dimensions in mm
0.8 2-4.50.25 MOUNTING HOLES 12
EVP GVP EWP GWP
1
(1)
GUP EUP P
13 5 t=0.6
MAIN CIRCUIT TERMINAL
2.5 18 6
530.5
55
56
2.5
18
6
R
S
7.5 8
13
4 10
PPS PPS
0.6
t=0.6
T
B TH1
U V TH2
W GB E
GUN GVN GWN
2-R5 P1 GT P2 P
CONTROL CIRCUIT TERMINAL
8
8
8
8 2.54
8
8
8
2.54 2.54 2.54 2.54
R S T
GUP B GB GUN EUP
GVP EVP GVN
GWP EWP GWN
900.3
LABEL
N1 TH1 TH2 (sense terminal) N U CIRCUIT DIAGRAM
V
W
E
Sep. 2000
MITSUBISHI IGBT MODULES
CM10AD00-24H
MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE
MAXIMUM RATINGS (Tj = 25C) INVERTER PART
Symbol Parameter G-E Short C-E Short TC = 25C PULSE TC = 25C PULSE TC = 25C Conditions Collector-emitter voltage VCES VGES Gate-emitter voltage IC Collector Current ICM IE (Note.1) Emitter Current IEM (Note.1) PC (Note.3) Maximum collector dissipation Rating 1200 20 10 20 10 20 62 Unit V V A A A A W
(Note. 2) (Note. 2)
BRAKE PART
Symbol VCES VGES IC ICM PC (Note.3) VRRM IFM (Note.3) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Maximum collector dissipation Repetitive peak reverse voltage Forward current G-E Short C-E Short TC = 25C PULSE TC = 25C Clamp diode part Clamp diode part Conditions Rating 1200 20 10 20 59 1200 10 Unit V V A A W V A
(Note. 2)
CONVERTER PART
Symbol VRRM Ea IO IFSM I 2t Parameter Conditions Rating 1600 440 10 100 42 Unit V V A A A2s Repetitive peak reverse voltage Recommended AC input voltage DC output current 3 rectifying circuit Surge (non-repetitive) forward current 1/2 cycle at 60Hz, peak value, Non-repetitive I2t for fusing Value for one cycle of surge current
THYRISTOR PART
Symbol VDRM VRRM IT(AV) ITSM PGM PG(AV) IFGM VFGM VRGM di/dt Parameter Conditions Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Single-phase, half-wave 180 conduction Surge (non-repetitive) on-state current 1/2 cycle at 60Hz, peak value Non-repetitive Rating 1600 1600 10 100 10 1 3 10 5 100 Unit V V A A W W A V V A/s
Peak gate power dissipation Average gate power dissipation Peak gate forward current Peak gate forward voltage Peak gate reverse voltage Critical rate of rise of on-state Current IG=100mA, VD=800V, dIG/dt=1A/s
COMMON RATING
Symbol Tj Tj Tstg Viso -- -- Parameter Junction temperature Junction temperature Storage temperature Isolation voltage Mounting torque Weight Conditions Inverter, brake, converter part Thyristor part AC 1 min. Mounting M4 screw Typical value Rating -40 ~ +150 -40 ~ +125 -40 ~ +125 2500 1.47 ~ 1.96 120 Unit C C C V N*m g
Sep. 2000
MITSUBISHI IGBT MODULES
CM10AD00-24H
MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Tj = 25C) INVERTER PART
Symbol ICES VGE(th) IGES Parameter Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Test conditions VCE = VCES, VGE = 0V IC = 1.0mA, VCE = 10V Min. -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ. -- 6 -- 2.7 2.45 -- -- -- 50 -- -- -- -- -- -- 0.08 -- -- Max. 1 7.5 0.5 3.4 -- 2.0 1.5 0.4 -- 100 200 150 350 3.5 250 -- 2.0 3.1 Unit mA V A V nF nF nF nC ns ns ns ns V ns C C/W C/W
VGE = VGES, VCE = 0V Tj = 25C Collector-emitter saturation voltage IC = 10A, VGE = 15V VCE(sat) Tj = 150C Input capacitance Cies VCE = 10V Output capacitance Coes VGE = 0V Cres Reverse transfer capacitance QG VCC = 600V, IC = 10A, VGE = 15V Total gate charge td(on) Turn-on delay time VCC = 600V, IC = 10A tr Turn-on rise time VGE1 = VGE2 = 15V td(off) RG = 31 Turn-off delay time tf Turn-off fall time Resistive load VEC(Note.1) Emitter-collector voltage IE = 10A, VGE = 0V trr (Note.1) Reverse recovery time IE = 10A, VGE = 0V Qrr (Note.1) Reverse recovery charge diE / dt = - 20A / s Rth(j-c)Q IGBT part, Per 1/6 module Thermal resistance Rth(j-c)R FWDi part, Per 1/6 module
(Note.4)
BRAKE PART
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG VFM Rth(j-c)Q Rth(j-c)R Parameter Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Test conditions VCE = VCES, VGE = 0V IC = 1.0mA, VCE = 10V Min. -- 4.5 -- -- -- -- -- -- -- -- -- -- Limits Typ. -- 6 -- 2.7 2.45 -- -- -- 50 -- -- -- Max. 1 7.5 0.5 3.4 -- 2.0 1.5 0.4 -- 3.5 2.1 3.2 Unit mA V A V nF nF nF nC V C/W C/W
VGE = VGES, VCE = 0V Tj = 25C IC = 10A, VGE = 15V Collector-emitter saturation voltage Tj = 150C Input capacitance VCE = 10V Output capacitance VGE = 0V Reverse transfer capacitance VCC = 600V, IC = 10A, VGE = 15V Total gate charge IF = 10A, Clamp diode part Forward voltage drop IGBT part Thermal resistance Clamp diode part
(Note.4)
CONVERTER PART
Symbol IRRM VFM Rth(j-c) Parameter Repetitive reverse current Forward voltage drop Thermal resistance Test conditions VR = VRRM, Tj = 150C IF = 10A Per 1/6 module Min. -- -- -- Limits Typ. -- -- -- Max. 8 1.7 2.6 Unit mA V C/W
Sep. 2000
MITSUBISHI IGBT MODULES
CM10AD00-24H
MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE
THYRISTOR PART
Symbol IDRM IRRM ITM IGT VGT dv/dt IH Rth(j-c) Parameter Test conditions Min. -- -- -- -- -- 500 -- -- Limits Typ. -- -- -- -- -- -- 50 -- Max. 1 1 1.45 50 3 -- -- 1.75 Unit mA mA V mA V V/s mA C/W
Repetitive peak off-state current VD=1600V Repetitive peak reverse current VR=1600V IT=10A, instantaneous means On-state voltage Gate trigger current Gate trigger voltage Critical rate of rise of off-state Voltage Holding current Thermal resistance VD=6V, IT=1A VD=6V, IT=1A Tj=125C, VD=1070V, exp. waveform
THERMISTOR PART
Symbol RTH B Parameter Resistance B Constant Test conditions TC = 25C Resistance at 25C, 50C Min. -- -- Limits Typ. 100 4000 Max. -- -- Unit k K
(Note.5)
RESISTOR PART
Symbol R -- Parameter Resistance Temperature coefficient Test conditions Measured between N-N1 Limits Min. -- -- Typ. 5.9 0.048 Max. -- -- Unit m %/C
COMMON RATING
Symbol Rth(c-f)
Note. 1 2 3 4 5
Parameter Contact thermal resistance
Test conditions Case to fin, Thermal compound applied* 1 (1 module)
Min. --
Limits Typ. 0.05
Max. --
Unit C/W
IE, VEC, trr, Qrr, diE/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. B = (InR1-InR2)/(1/T1-1/T2) R1 : Resistance at T1(K) R2 : Resistance at T2(K)
*1 : Typical value is measured by using Shin-etsu Silicone "G-746".
Sep. 2000

▲Up To Search▲

Price & Availability of CM10AD00-24H

	To Download CM10AD00-24H Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .